{"created":"2023-05-15T08:20:17.297525+00:00","id":2283,"links":{},"metadata":{"_buckets":{"deposit":"326d7568-966d-467b-a56c-fd629a16dbdc"},"_deposit":{"created_by":17,"id":"2283","owners":[17],"pid":{"revision_id":0,"type":"depid","value":"2283"},"status":"published"},"_oai":{"id":"oai:meisei.repo.nii.ac.jp:00002283","sets":["3:216:242"]},"author_link":["2659","2660"],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1990-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"26","bibliographicPageEnd":"89","bibliographicPageStart":"71","bibliographic_titles":[{"bibliographic_title":"明星大学研究紀要. 理工学部"},{"bibliographic_title":"Research bulletin of Meisei University. Physical Science and Engineering","bibliographic_titleLang":"en"}]}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"明星大学"}]},"item_10002_relation_12":{"attribute_name":"論文ID（NAID）","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"40003640042","subitem_relation_type_select":"NAID"}}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00075470","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0388130X","subitem_source_identifier_type":"ISSN"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"今井, 哲二"},{"creatorName":"イマイ, テツジ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"2659","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Imai, Tetsuji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"2660","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-23"}],"displaytype":"detail","filename":"rikoNo.26a07.pdf","filesize":[{"value":"327.1 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"本文","url":"https://meisei.repo.nii.ac.jp/record/2283/files/rikoNo.26a07.pdf"},"version_id":"62a9003c-24f9-4986-9e96-abbfe68d4e32"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Various properties of OMVPE-grown GaAs epilayers on heavily In-doped substrates","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Various properties of OMVPE-grown GaAs epilayers on heavily In-doped substrates"},{"subitem_title":"Various properties of OMVPE--grown GaAs epilayers on heavily In-doped substrates","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"17","path":["242"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-01-23"},"publish_date":"2020-01-23","publish_status":"0","recid":"2283","relation_version_is_last":true,"title":["Various properties of OMVPE-grown GaAs epilayers on heavily In-doped substrates"],"weko_creator_id":"17","weko_shared_id":-1},"updated":"2023-05-15T09:07:37.607175+00:00"}